Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method
نویسندگان
چکیده
منابع مشابه
Dopant concentration imaging in crystalline silicon wafers by band-to-band photoluminescence
Related Articles The role of excess minority carriers in light induced degradation examined by photoluminescence imaging J. Appl. Phys. 112, 033703 (2012) Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method J. Appl. Phys. 112, 033502 (2012) Strong photoluminescence from dia...
متن کاملArea Effect of Reflectance in Silicon Nanowires Grown by Electroless Etching
This paper shows that the reflectance in silicon nanowires (SiNWs) can be optimized as a function of the area of silicon substrate where the nanostructure growth. SiNWs were fabricated over four different areas of silicon substrates to study the size effects using electroless etching technique. Three different etching solution concentrations of silver nitrate (AgNO3) and hydroflu...
متن کاملInvestigation of HF/H2O2 Concentration Effect on Structural and Antireflection Properties of Porous Silicon Prepared by Metal-Assisted Chemical Etching Process for Photovoltaic Applications
Porous silicon was successfully prepared using metal-assisted chemical etching method. The Effect of HF/H2O2 concentration in etching solution as an affecting parameter on the prepared porosity type and size was investigated. Field emission electron microscopy (FE-SEM) confirmed that all etched samples had porous structure and the sample which was immersed into HF/H2O2 withmolar ratio of 7/3.53...
متن کاملStructure, morphology, and photoluminescence of porous Si nanowires: effect of different chemical treatments
The structure and light-emitting properties of Si nanowires (SiNWs) fabricated by a single-step metal-assisted chemical etching (MACE) process on highly boron-doped Si were investigated after different chemical treatments. The Si nanowires that result from the etching of a highly doped p-type Si wafer by MACE are fully porous, and as a result, they show intense photoluminescence (PL) at room te...
متن کاملSynthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays
Herein, we prepare vertical and single crystalline porous silicon nanowires (SiNWs) via a two-step metal-assisted electroless etching method. The porosity of the nanowires is restricted by etchant concentration, etching time and doping lever of the silicon wafer. The diffusion of silver ions could lead to the nucleation of silver nanoparticles on the nanowires and open new etching ways. Like po...
متن کامل